note: pins 1 & 3 must be electrically connected at the printed circuit board. ds30284 rev. b-2 1 of 2 MBRD835L www.diodes.com diodes incorporated MBRD835L 8a low vf schottky barrier rectifier features single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. case: dpak molded plastic terminals: solderable per mil-std-202, method 208 polarity: see diagram marking: type number weight: 0.4 grams (approx.) mechanical data b c d e g h j k l m a p 123 4 pin 1 pin 3 pin 4, bottomside heat s ink characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 35 v rms reverse voltage v r(rms) 25 v average rectified forward current @ t c = 88 c i f(av) 8a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 75 a typical thermal resistance junction to case (note 2) r jc 6.0 c/w typical thermal resistance junction to ambient (note 2) r ja 80 c/w operating temperature range t j -65 to +125 c storage temperature range t stg -65 to +150 c guard ring die construction for transient protection low power loss, high efficiency high surge capability very low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications plastic material: ul flammability classification rating 94v-0 t c u d o r p w e n maximum ratings @ t a = 25 c unless otherwise specified electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition reverse breakdown voltage (note 1) v (br)r 35 v i r = 1ma forward voltage (note 1) v fm 0.48 0.51 0.41 v i f = 8a, t s = 25 c i f = 8a, t s = 125 c peak reverse current (note 1) i rm 0.1 1.4 35 ma t s = 25 c, v r = 35v t s = 100 c, v r = 35v junction capacitance c j 600 pf f = 1.0mhz, v r = 4.0v dc notes: 1. short duration test pulse used to minimize self-heating effect. 2. mounted on pc board with 14mm 2 (.013mm thick) copper pad areas. dpak dim min max a 6.3 6.7 b 10 c 0.3 0.8 d 2.3 nominal e 2.1 2.5 g 0.4 0.6 h 1.2 1.6 j 5.3 5.7 k 0.5 nominal l 1.3 1.8 m 1.0 p 5.1 5.5 all dimensions in mm
ds30284 rev. b-2 2 of 2 MBRD835L www.diodes.com 0 5 10 15 20 25 30 40 35 i , instantane o us reverse current ( m a) r v , instantaneous reverse voltage (v) r fig. 3 typical reverse characteristics t = +25oc a t=+125oc a t = +100oc a t = +75oc a 10 1 0.1 0.01 0.001 100 0 100 200 300 400 600 500 i , instantane o us f o rward current (a) f v , instantaneous forward voltage (mv) f fig. 2 typical forward characteristics 10 1 0.1 0.01 0.001 0.0001 100 t=+25 c a t = +125 c a t = +100 c a 0 2.5 5.0 10.0 7.5 12.5 15.0 17.5 60 70 80 90 100 110 120 130 i , average f o rward current (a) f(av) t , case temperature (c) c fig. 1 current derating, infinite heatsink t = 125c j i pk i av 100 1000 10,000 0 15 10 25 30 35 20 40 c , juncti o n capacitance (pf) j v , reverse voltage (v) r fig. 4 typical junction capacitance vs. reverse voltage 5 f=1mhz t c u d o r p w e n 0 1 1.5 0.5 2 2.5 3 3.5 5 4 4.5 0 20 10 40 30 50 60 70 80 100 90 110 120 130 i , average f o rward current (a) f(av) t , ambient temperature (c) a fig. 5 current derating, free air t = 125c j surface mounted on minimum recommended pad size dc 0 1 2 3 5 4 6 7 8 0 1.5 4.5 3 6 7.5 9 10.5 12 13.5 15 p , average forward power dissipation (w) f(av) i , average forward current (a) f(av) fi g . 6 forward power dissipation t = 125c j dc
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